Abstract

MoOx thin films were deposited are deposited by DC reactive magnetron sputtering at different technological conditions. Structural, electrical and optical properties of the thin films were investigated. Temperature dependences of the resistance R of the MoOx films were measured within the temperature range T ÷ 295-420 K. There was established that all samples under investigation had n-type of conductivity. Based on the dependences α2 = f(hν ), the presence of direct allowed interband optical transitions in the MoOx thin films is established and the optical band gap values are determined.

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