Abstract
CuxO thin films have been deposited by reactive radio frequency magnetron sputtering at different target powers Ptar (140–190W) by fixing other process parameters: oxygen mass flow, argon mass flow and substrate temperature. Follow-up characterization (structural, electrical and optical) results reveal that the target power has a strong influence on both composition and functional properties of the resulting CuxO films and particularly, the films tend to enter a Cu-rich phase by increasing the target power. Furthermore, the films prepared at the highest power (190W) exhibit single phase Cu2O and demonstrate superior electrical properties and high growth rate.
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