Abstract

Influence of synthesis conditions of titanium–oxygen nanostructures on their electrochemical behavior is studied. The nanostructures were prepared by molecular layer-by-layer deposition from the gaseous phase onto the substrates (silicon oxides titanium oxide, and silicon covered with oxide film). It is found that the deposition of a titanium–oxygen nanolayer onto the titanium oxide does not change the position of isoelectric point and the value of electrokinetic potential. Deposition of the titanium–oxygen nanostructure on the initial, as well as on the thermally and chemically modified silicon and silicon oxide substrates at various temperatures yields samples whose isoelectric points lie between the values for the substrate and deposited titanium oxide.

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