Abstract
The influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al 2 O 3 nanowires with rectangular cross-section is studied by means of the direct numerical solution of the Boltzmann transport equation at the electric quantum limit for different values of the nanowire cross-section dimensions, the nanowire temperature and the Fermi level in a one-dimensional electron gas. The formulae for calculation of surface roughness scattering matrix elements are derived in such a way that they contain the topological parameter Δ 2D characterizing the surface roughness instead of the physical one, Δ 1D , usually used.
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