Abstract
The influence of the front near-surface isotypic n+-n-junction on the recombination characteristics of silicon photosensitive structures was experimentally investigated. It was shown that the presence of near-surface isotypic junction in such structures provides low velocity of effective surface recombination even in the case unpassivated surface. It was found that after complete etching of heavily doped n+-layer of near-surface isotypic n+-n-junction the effective surface recombination velocity increases due to the fact that the dominant recombination mechanisms in this case are recombination via surface recombination centres and recombination in the depletion layer of spacecharge region.
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