Abstract
AbstractWe investigated low‐frequency noise in passivated and nonpassivated AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate. The heterostructure layers are grown without intentionally doping the barrier material and two‐dimensional gas appears at the interface only due to polarization effects. Transmission line model structures with different lengths of the conducting channel were studied in a wide range of temperatures in a linear regime. The magnitude of the noise and Hooge parameter demonstrate different dependence on the distance between contacts in passivated and non‐passivated structures. Noise reduction in the structure for around one order of magnitude after passivation was revealed and different origins of the noise before and after passivation established. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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