Abstract
GasFET devices are based on the superficial conductivity change of semiconducting substrate in the presence of the gas to be detected. One way to improve the selectivity and the sensitivity of the gas sensor is to modify the surface with a catalytic metal film. Usually, this film is made by sputtering or a thermal evaporation process. In this study, using a chemical catalytic metal deposition method (from colloidal solution), we are able to vary the size and morphology of the metal islands in order to understand the key role of the metal. The effect of various surface modifications on the gas sensor behaviour in contact with the gas is investigated by measuring the surface potential variations using a vibrating capacitor technique.
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