Abstract
A comparative study of the role of surface effects in the sensitivity of lateral magnetotransistors and magnetodiodes is presented. The surface potential at the Si–SiO2 interface is changed by means of the gate voltage. Both types of devices are realized in standard complementary metal oxide semiconductor technology. The results indicate that improvement of the sensitivity can be achieved in both cases, but the dependence of sensitivity of magnetotransistor on surface effects is much lower than that of magnetodiode.
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