Abstract
We report on measurements and analysis of subband-gap absorption spectra for a-Si:H thin films by the constant photocurrent method (CPM) in two configurations: illumination from the film side and through the substrate. As in the case of PDS, the amplitude of the interference fringes was enhanced in the measurement from the film side, which means that, even in CPM measurement, the influence of surface defects has to be taken into account.
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