Abstract
The influence on chlorine chemisorption of surface defects created by low-fluence Ar + sputtering of the Si(100)-(2 × 1) surface has been studied. A distinctly different type of Cl bonding is observed on defect sites compared to Cl bonding on Si Si dimers, as judged by electron-stimulated desorption ion angular distribution (ESDIAD) measurements. On the ordered Si(100) surface only terminally bonded Si Cl species are observed (producing four off-normal Cl + beams); on the disordered Si(100) surface an additional Cl + beam emitted in the normal direction is present at 120 K. This Cl + beam is interpreted as a bridge-bonded Cl species chemisorbed inside of the dimer vacancy defects. In SiCl 2 thermal desorption, a new low-temperature desorption channel is observed on disordered Si(100) surfaces, indicating that defect sites enhance the rate of surface etching. In the range of Ar + fluences studied (0.2–5 monolayers) the Cl saturation coverage increases by as much as 30%, over that observed on non-defective Si(100)-(2 × 1).
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