Abstract

AbstractThe microporosity, structure and permeability of SiOx thin films deposited by microwave plasma‐enhanced chemical vapour deposition (PE‐CVD) and plasma‐enhanced atomic layer deposition (PE‐ALD) on polydimethylsiloxane (PDMS) substrates were investigated by positron annihilation spectroscopy and complementary technique, such as X‐ray photoelectron spectroscopy, infrared spectroscopy, time of flight mass spectroscopy and atomic force microscopy. The SiOx films were deposited onto spin‐coated PDMS substrates, which were previously exposed to an oxygen plasma thus achieving the conversion of the top polymer layer into SiOx. The presence of this oxidised surface near the region led to an overall decrease in micropore density and to a shift towards smaller pore sizes within the deposited SiOx films. A correlation between the oxygen fluence during the oxygen plasma treatment and the microporosity of the PE‐CVD and PE‐ALD SiOx films could be established.

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