Abstract
In this article, we present the effects of voltage scaling and forward body biasing (FBB) on single-event effect sensitivity of a 28-nm ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology. Heavy-ion irradiation was performed for single-event upset (SEU) and single-event transient (SET) sensitivity assessment on characterization test chips under three supply voltages, with and without back-gate voltage application. Measurements show a steady SEU sensitivity for any supply voltage across the two FBB configurations, whereas SET sensitivity is diminished under FBB. SPICE and TCAD mixed-mode simulations were run to assess the contribution of electrical factors as well as charge extraction mechanisms. While drive strength is increased under FBB, the bipolar amplification plays an important role in sensitivity at low linear energy transfers (LETs).
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