Abstract

The room-temperature magnetoresistance (MR) of electrodeposited Co–Cu/Cu multilayers was investigated. Samples were prepared on either a polycrystalline Ti foil or on a silicon wafer covered with a Ta buffer and a Cu-seed layer. The field dependence of the magnetoresistance was analyzed by decomposing the GMR into ferromagnetic (FM) and superparamagnetic (SPM) contributions, whereby the field dependence of the latter could be described by a Langevin function. In order to better understand the influence of the deposition conditions on the GMR in electrodeposited multilayers, the evolution of the relative importance of the two GMR contributions is discussed in terms of the Co dissolution process during the Cu deposition pulse.

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