Abstract

We have studied the surface morphology, photoluminescence (PL), Raman spectra and optical absorption of the porous silicon (PS) samples prepared under supercritical drying (SD) and natural drying (ND) process. The experimental results of scan electron microphotograph and Raman spectra show that there are obvious differences in microstructure between the SD and ND samples. No crack of the skeleton has been found in the SD sample, but the skeleton of the ND sample has heavily destroyed. Besides, the PL and absorption spectra of the SD sample are not the same as those of the ND sample.

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