Abstract
Titanium nitride (TiN) films were successfully deposited on different substrates (glass, SiO2 and Si) by direct-current (DC) reaction magnetron sputtering technique, and the structural, optical and electrical properties of samples were investigated. X-ray diffraction patterns showed the films deposited on Si substrates exhibit best crystallinity with a growth preferred orientation of (200) plane. Atomic force microscopy images revealed the films deposited on Si substrates exhibit best uniform distribution of grain size. Raman spectra indicated the Raman shifts of films on SiO2 and Si substrates moved towards higher frequency compared to films on glass substrates. Reflectance spectra suggested that the films deposited on Si substrates show highest reflectance in the infrared region and reached 0.98 at 900 nm. The films deposited on Si substrates presented the lowest resistivity of 50 µΩ cm.
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