Abstract
(AlGa)2O3 thin films were deposited on (0001) sapphire substrates by pulsed laser deposition at different substrate temperatures. The influence of substrate temperature on surface morphology, optical properties, and crystal quality has been systematically investigated by atomic force microscope, transmission spectra, X-ray diffraction, and Raman spectroscopy. The results reveal that all the (AlGa)2O3 films have smooth surface and high transmittance. The (AlGa)2O3 film with the good crystal quality can be obtained at a substrate temperature of 400°C. Our results provide an experimental basis for realizing the Ga2O3-based quantum well.
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