Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by MOCVD

Abstract

The Sb-doped ZnO films were grown on c-plane sapphire by metal organic chemical vapor deposition technology with various substrate temperatures. We have examined the influence of the substrate temperature on the crystal, electrical and optical properties of the Sb-doped ZnO films. The XRD patterns indicated the undoped ZnO film and the Sb-doped ZnO films showed a strong preferred orientation toward the c-axis. Hall effects measurements revealed the Sb-doped ZnO films exhibited p-type electrical conductivity. Low temperature photoluminescence spectra confirmed the existence of Sb in ZnO films. The photoluminescence spectra of the Sb-doped ZnO films revealed the transition between the free electrons and acceptors peak at 3.243 eV, the acceptor-bound exciton peak at 3.319 eV. The thermal binding energy of the Sb accepter was estimated to be about 0.19 eV.