Abstract
The dependence of the optical properties and crystallization of hydrogenated silicon (Si:H) on various substrate temperatures was studied. Instead of using high-diluted silane in H 2, pure silane was used as source gas. The films were grown by radiofrequency plasma-enhanced chemical vapor deposition (RF-PECVD) method at the substrate temperature ranging from 423 to 573 K. The transit between amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) was characterized by atomic force microscope (AFM) morphology and X-ray diffraction (XRD) microstructure analysis. The thickness and optical constants of films were measured by spectra ellipsometer (SE) as well as scanning electron microscopy (SEM). Fourier-transform infrared spectrometer (FTIR) was used to characterize the effect of KBr substrate temperature to bonding configurations of Si:H films. Derived from Tauc relation, optical band gap E g and coefficient B depending on the pressure during deposition process was also discussed.
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