Abstract
The dependence of the implantation-induced morphology on substrate heating during high dose O+ irradiation of Si was investigated. For high dose oxygen implantation, a continuous buried oxide layer forms during implantation. It is shown that the damage morphology in the crystalline region ahead of the buried oxide is extremely sensitive to variations in the temperature of the substrate about 475 °C. Both backscattering/channeling spectroscopy and transmission electron microscopy were used in determining the microstructure of the implanted samples.
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