Abstract
The results of resistivity and Hall voltage measurements on InSb films 1000 Å thick, flash-evaporated onto glass substrates over a wide range of substrate temperatures, are reported. From the experimental curves obtained, an optimum substrate temperature is deduced. The position of a sharp peak observed in the mobility versus substrate temperature curve is explained in terms of a stoichiometric interval associated with the pressure-temperature diagram of the In-Sb binary system.
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