Abstract
Zinc oxide (ZnO) thin films are deposited at different substrate temperatures (Tsub) by low‐pressure chemical vapor deposition (LPCVD) technique. The influence of Tsub on the properties of LPCVD ZnO and the performance of copper indium gallium di‐selenide (Cu(In, Ga)Se2, CIGS) thin films are systematically investigated. The highest efficiency of 11.7% is achieved for CIGS thin film solar cells with LPCVD ZnO thin film window layers deposited at 119 °C. In addition, a thermal treatment at 104 °C before the ZnO deposition results in a pronounced efficiency enhancement, and achieved a high efficiency of 14.4% in CIGS solar cell with the structure of glass/Mo/CIGS absorber/CdS/i‐ZnO/n‐ITO/Al grid.
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