Abstract
Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe 3Si on Si was investigated using low temperature (60–300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe 3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe 3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χ min of the Fe 3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe 3Si/Si interfaces.
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