Abstract
SiC filament was prepared by Chemical Vapour Deposition method using W wire as the substance material. The combination between W wire and SiC became a key element influencing tensile strength of SiC. In this paper, tensile fracture morphology of SiC filament was analyzed, from which interface combination between SiC and W wire was discussed under different deposition temperature and the influence of interface layer’s thickness on final tensile of SiC filament was given. How to control the thickness of interface layer is a key factor for improving performance of SiC filament.
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