Abstract

AbstractThin 200‐nm epoxy–amine mixtures were cured on silicon wafers with different surface chemistry to quantify the effect of the chemistry on the glass transition temperature evolution in ultra‐thin thermosetting films. Two surface treatments were investigated: the first one only consisted in the activation of the silanols groups at the silicon surface, whereas the second one consisted in the grafting 3‐aminopropyltrimethoxysilane (APTMS) monolayer on the silicon wafers. The epoxy films were deposited on these chemistry modified wafers by spin coating a toluene solution of DGEBA–amine mixture at stoichiometric ratio. The same cure processing was used for both samples. Thin films were analysed not only using microthermal and thermomechanical analysis to determine the relaxation transitions temperatures of these films but also using FTIR in infrared reflection absorption spectroscopy mode to determine the curing rate of these networks. It was found that all these thin films showed two different glass transitions, the first one at 96 °C and was independent of the surface treatments, whereas the second one increasing from 142 °C for the oxidised wafers surface to 167 °C for the aminosilane grafted on the silicon wafer. The substrate chemistry extent on the film network structure, the interfacial bonds and interactions are discussed. This work also illustrates the interest in using microthermal analysis to obtain relevant temperature glass transition of thin film at sub‐micrometre scale, strongly dependant of local structure and chemistry composition. Copyright © 2009 John Wiley & Sons, Ltd.

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