Abstract
AbstractZrOx thin films were deposited by sputtering a pure zirconia target under argon–oxygen atmosphere and soft conditions: low substrate temperature and applied power. An anode biasing was added for different time durations in order to modify the substrate/layer interface. Auger profiling showed a sub‐stochiometric character that increases with the ion bombardment. The latter treatment led to the formation of an oxygen rich interface. XPS analysis revealed that all the zirconium was bonded to oxygen. Moreover, using the energy loss from the O 1s photoelectron signal, the optical band gap was found to increase with the biasing time. Capacitance–voltage measurement showed a high dielectric constant for all the deposits and defect formation in the film bulk when the ion bombardment was added during the layer growth.
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