Abstract
The effect of structure parameters on the performance of p-i-n InGaN solar cell is investigated by theoretical calculation. It is found that the short-circuit current decreases while the open-circuit voltage increases with the increase of bandgap of InGaN material. The maximal energy conversion efficiency of p-i-n homojunction InGaN solar cell can be obtained when the bandgap of InGaN is around 1.5 eV. It is also found that the energy conversion efficiency can be improved by appropriately increasing bandgap of p-InGaN p-i-n heterojunction InGaN solar cell, in addition, the efficiency of p-i-n heterojunction InGaN solar cell may be increased further by employing the back electric filed structure. The simulation results suggest that performance of InGaN solar cell can be improved by employing p-i-n heterojunction structure if the appropriate bandgaps of p-InGaN and n-InGaN are adopted.
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