Abstract
The 1/f noise in thin niobium films manufactured by various technologies and exposed to γ-quantum irradiation and current annealing has been studied. The evaporation conditions (the sublayer material and the substrate temperature) are shown to strongly affect the noise level. Irradiation adds to the film noise, whereas current annealing leads to decrease of the latter. The current dependence of the voltage fluctuations is found to be nonlinear. The fluctuations are proportional to the current in the region of low currents, and they are proportional to the square of the current flowing through the specimen in the region of high currents. The results are interpreted based on the relation of the 1/f noise to the mobile defects of the crystal structure.
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