Abstract
We use the magnetooptical method of interface characterisation to study Mn diffusion caused by annealing of CdTe quantum wells with CdMnTe barriers. To investigate influence of strain in the sample on the diffusion process we anneal structures grown pseudomorphically on thick buffers of different lattice constant. Our results show that the strain in the quantum well strongly enhances diffusion of Mn 2+ ions into the quantum well during annealing. Measurements of samples annealed twice show a strong enhancement of the diffusion efficiency during the second process.
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