Abstract
We investigate the lateral low-temperature electron transport in shallow pseudomorphous two-sided δ-doped GaAs/In0.12Ga0.88As/GaAs quantum wells (QWs) depending on the QW width, doping level, and the presence of a thin central AlAs barrier. Such a barrier is shown to change the band structure and wave functions of electrons in the QWs, causing a significant change in the scattering of electrons and a change in their mobility.
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