Influence of sputtering power on the phase transition performance of VO2 thin films grown by magnetron sputtering

Abstract

The influence of sputtering power on the electrical and infrared properties of VO2 thin films was investigated. It was found that the controlling of sputtering power is very important in realizing the pure VO2 (M) thin film. The thin films grown at the sputtering powers of 350 W and above have a similar phase transition behavior to bulk VO2. The infrared transmittance and electrical resistance of the VO2 thin film also depend on the sputtering power, and the hysteresis width is controlled by the size effect. The film thickness and defect density affect the amplitudes of the phase transition and phase transition temperature.