Abstract
In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different sputtering powers. With the sputtering power increasing from 100 W to 400 W, the film’s crystallinity was enhanced. When the sputtering power was 400 W, an In2O3 (104) plane could be detected. Films with optimal electrical properties were produced at a sputtering power of 300 W, a carrier mobility of 31.25 cm2·V−1·s−1, a carrier concentration of 9.11 × 1018 cm−3, and a resistivity of 2.19 × 10−4 Ω·m.
Highlights
Transparent conducting oxides (TCOs) have recently received much attention because of several of their advantages, such as high transmittance in the visible light range, good chemical stability, good electrical conductivity, compatibility, and adhesion to typical glass substrates [1,2,3]
indium-tinindium-tin-zinc oxide (ITZO) thin films were deposited by high-power impulse magnetron sputtering (HiPIMS) with a duty cycle of 9.09%
ITZO thin films were deposited at different sputtering powers using HiPIMS
Summary
Transparent conducting oxides (TCOs) have recently received much attention because of several of their advantages, such as high transmittance in the visible light range, good chemical stability, good electrical conductivity, compatibility, and adhesion to typical glass substrates [1,2,3]. Because of their unique and excellent properties, they have been adopted in numerous applications. Significant interest has emerged around oxide semiconductor film materials which can can be applied in optoelectronic devices, such as panel displays and solar cells. The substitution of In3+ ions by Zn2+/Sn4+ pairs leads to lattice lattice distortion, the existence of ZnIn (i.e. the substitution of In3+ by Zn2+ ) is beneficial in forming VO distortion, the existence of ZnIn (i.e. the substitution of In3+ by Zn2+) is beneficial in forming VO (oxygen (oxygen vacancies), and SnIn (i.e. the substitution of In3+ by Sn4+ ) donor defects, which improve the vacancies), and SnIn (i.e. the substitution of In3+ by Sn4+) donor defects, which improve the carrier carrier concentration [14,15]
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