Abstract
InP high electron mobility transistors (InP HEMTs) with different spacer thickness 1 to 7 nm in the InAlAs-InGaAs heterostructure have been fabricated and characterized at 5 K with respect to electrical dc and rf properties. The InP HEMT noise performance was extracted from gain and noise measurements of a hybrid low-noise amplifier (LNA) at 5 K equipped with discrete transistors. When biased for optimal noise operation, the LNA using 5 nm spacer thickness InP HEMTs achieved the lowest average noise temperature of 1.4 K at 4–8 GHz. The InP HEMT channel noise was estimated from the drain noise temperature which confirmed the minimum in noise temperature for the 5 nm spacer thickness InP HEMT. It is suggested that the spacer thickness acts to control the degree of real-space transfer of electrons from the channel to the barrier responsible for the observed noise variation in the cryogenic InP HEMTs.
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