Influence of SnO2, ZnO and TiO2 layer on the performance of CIGS and CdTe solar cells

Abstract

As a type electron transmission layer, SnO2, ZnO and TiO2 layer were applied as a buffer between transparent conductive oxide and n-CdS layer in CIGS and CdTe solar cells. J-V curve of device with three different buffer layer were simulated theoretically through Poisson equation and electron-hole continuity equation. Open-circuit voltage, short-circuit current, fill factor and conversion efficiency were derived. It’s shown that for CdTe solar cells, performance of device with three kind of buffer layers SnO2, ZnO and TiO2 did not differ two much. While for the CIGS solar cells, device with TiO2 showed a small fill factor, then leading to a lower conversion efficiency. Transparent oxide SnO2 and ZnO were suggested for the buffer layer for optimization CIGS and CdTe solar structure depending on the art of manufacturing.