Abstract
The effect of aluminum doped zinc oxide film used between a fluorine doped tin oxide layer and a hydrogenated amorphous silicon carbide layer to improve the open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cells. The efficiency enhancement was accomplished by the insertion of high work-function layers engineered in the interfaces to raise FF as well as Voc. Therefore, we were able to obtain the conversion efficiency of 10.34% at 16.14 mA/cm2 of the current density (Jsc) and 70.37% of FF.
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