Abstract
Water-soluble Cd0.9−xZn0.1SnxS (0 ≤ x ≤ 0.06) quantum dots were prepared by dual doping of Sn and Zn via chemical co-precipitation technique. XRD results confirmed the cubic structure of CdS crystallites without generating any secondary peaks due to doping. TEM analysis revealed the structural information of the Sn-doped CdS host. The Sn substitution enhanced the particle size lightly. The surface morphological study revealed that the agglomeration of the samples was decreased. From UV–visible optical study, it was observed that the optical transmittance was suppressed owing to Sn substitution. Absorption peaks were blueshifted, and band gap values were widened due to incorporation of Sn. The strong PL emission peaks were received at 400 nm−1 and weak peaks near 490 nm−1. The peaks originated near the UV region were due to sulfur vacancies on the surface. EDX and FTIR studies confirmed the presence of Sn in the prepared samples. Since the possibility of tailoring the band gap toward a high energy gap, these materials composition may be selected for optoelectronic device fabrication.
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