Influence of Sn on thermal expansion and dielectric properties of ZrMgMo3O12

Abstract

Exploring new applications of negative thermal expansion (NTE) materials is a recent research hotspot. In this work, the IV A element Sn was used to tailor the thermal expansion and dielectric properties of NTE material ZrMgMo3O12, and the samples Zr1–xSnxMgMo3O12 (x = 0.05, 0.10, 0.15, 0.20, 0.25) can be used in the field of high-frequency dielectric ceramics. Both the substitution amount of Sn and sintering temperature have a certain effect on the properties of Zr1-xSnxMgMo3O12. The coefficients of thermal expansion (CTE) can be adjusted between near zero thermal expansion (ZTE) (−0.24 × 10−6/K−1) and NTE (−8.16 × 10−6/K−1) and become larger toward negative as the amount of Sn increased under the same sintering temperature. The dielectric constants of Zr1-xSnxMgMo3O12 can be adjusted in the range of 130∼155, which are about 25 times than ZrMgMo3O12. The dissipation factors of Zr1-xSnxMgMo3O12 were adjustable between 4.37 × 10−4 and 5.54 × 10−4, meeting the application requirements of high-frequency dielectric ceramics. This research shows that Sn can adjust the thermal expansion properties and significantly improves the dielectric properties of ZrMgMo3O12, so that Zr1-xSnxMgMo3O12 materials have high value in the field of high-frequency dielectric ceramics.