Influence of Sn Low Doping on the Morphological, Structural and Optical Properties of ZnO Films Deposited by Sol Gel Dip-Coating

Chewki Zegadi,Mohamed Adnane,Denis Chaumont,Saad Hamzaoui,Khalil Abdelkebir

doi:10.4236/ampc.2014.45012

Chewki Zegadi, Mohamed Adnane + Show 3 more

Open Access

https://doi.org/10.4236/ampc.2014.45012

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Abstract

In this work, Undoped Zinc Oxide (ZnO) and Sndoped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3% and 5% in the solution. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. The Scanning Electron Microscopy (SEM) showed that the morphological surface of the films was affected by Sn low doping. The X-Ray Diffraction (XRD) patterns showed that all films have polycrystalline structures, and the doping incorporation has not lead to substantial changes in the structural characteristics of ZnO films. The crystallite size was calculated using the well-known Scherrer’s formula and found to be in the range of 23 - 40 nm. The measurements from UV-Visible Spectrophotometer (U-Vis) indicated that the highest average optical transmittance in the visible region was related to Undoped ZnO film, then the optical band gap and Urbach energy values of thin films were calculated. The X-Ray Photoelectron Spectroscopy (XPS) has demonstrated that Sn is incorporated in ZnO lattice.

Highlights

Zinc Oxide (ZnO) thin film has been extensively studied for their attractive properties in electronic and optoelectronic applications [1] such as rectifiers, filters, resonators for radio communications and image processing [2]-[4]
Undoped Zinc Oxide and Sn-doped Zinc Oxide thin films have been prepared by sol-gel dip-coating technique that helped us to obtain structures with high efficiency
The Scanning Electron Microscopy (SEM) illustrated that the surface morphology of films was affected by the tin doping

Summary

Introduction

Zinc Oxide (ZnO) thin film has been extensively studied for their attractive properties in electronic and optoelectronic applications [1] such as rectifiers, filters, resonators for radio communications and image processing [2]-[4]. The sol-gel method is considered as an adequate procedure for high purity and homogeneous films [15], based on the hydrolysis and the polycondensation of metal organic precursors, such as metal alkoxides [16]. This deposition technique has been the Scientifics’ main interest last for few years due to the low temperature processing [17]. The goal is to obtain materials with desired properties by simple method and reliable deposits This is why the “sol-gel dip-coating” technique has been chosen to coat thin films of ZnO and ZnO:Sn conductors [20] [21]. For Sn low doping using the Sn/Zn atomic ratio, was 3% and 5% in the solution

Findings

Characterization

Conclusion