Abstract
In this work, we study the effect of doping Sn on the structural and optical properties of pure cadmium oxide films at different concentrations of Tin (Sn) (X=0.1,0.3 and 0.5) .The films prepared by using the laser-induced plasma at wavelength of laser 1064 nm and duration 9 ns under pressure reached to 2.5×10-2 mbar. The results of X-ray diffraction tests showed that the all prepared films are polycrystalline. As for the topography of the films surface, it was measured using AFM , where the results showed that the grain size increases with an increase in the percentage of doping in addition to an increase in the average roughness. The optical properties of all films have also been studied through the absorbance spectrum of the range of the wavelength (350-1100) nm, where the optical energy gap was direct transitions it was found that the value of the optical energy gap increased with increasing the doping.
Highlights
The pulse laser deposition method is one of the best and cheapest techniques for semiconductor and mineral deposits and oxides in different technological conditions
Pulse laser deposition (PLD) is usually preferred to use high-energy laser pulses with an energy density of more than 108 (W /cm2) to precipitate a thin layer from one target. As this type of semiconductor material is mostly prepared in the form of thin films [2]
The results of the diagnosis using X-ray diffraction technique showed that all prepared thin films with polycrystalline
Summary
The pulse laser deposition method is one of the best and cheapest techniques for semiconductor and mineral deposits and oxides in different technological conditions.
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