Abstract
The photon absorption coefficient in the arrays of InAs quantum dots embedded in GaAs is investigated. The influence of size and shape of the quantum dots on the miniband structure is analyzed. A detailed study is carried out in order to understand the physics relating to the absorption. The influence on the absorption coefficient due to the difference of energies between the lowest minibands, the joint density of states and the features of the wavefunctions are investigated in order to shed light on the phenomenon and understand it. The existence of thresholds in the absorption coefficient in the far infrared region, related to the shape of the quantum dots, is finally revealed, thus demonstrating that it may be an element to use both in future applications and in characterization of the materials.
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