Abstract
The effect of sintering on microstructure, dielectric property and varistor property of ZnO-based multilayer varistor (MLV) were investigated. The results show that an optimum microstructure of ZnO-based MLV can be obtained when sintering at 950 °C/1.5 h. The reaction between ZnO and Sb 2O 3 is noted. Also, the segregation of Bi 2O 3 to the inner electrode and thus the reaction of Bi 2O 3 with Pd are observed. The V B and α value of ZnO-based MLV can be controlled in a straightforward manner through the control of grain size. The decrease in V B directly relates to the grain growth of ZnO grains when increasing the sintering temperatures from 900 to 1050 °C. Moreover, the increase of capacitance with sintering temperature may mainly result from the coalescence of ZnO matrix grains. The energy absorption capabilities in terms of electro-static discharge (ESD) and peak current (PC) measurements of ZnO-based MLV are reported. The optimum varistor properties of ZnO-based MLV can be obtained when sintering at 950 °C.
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