Abstract
CaCu 3 Ti 4 O 12 (CCTO) ceramics were sintered in the mixed gases flow of O 2 and N 2 with different volume ratios by the solid state reaction method, the volume ratios were strictly controlled by a gas mixture proportioner during sintering. The effects of different volume fractions of O 2 ( x ) on the microstructure and dielectric properties of CCTO ceramics were investigated. The appearance of Cu 4 O 3 phase in the XRD patterns when x ≥20%, suggests that a chemical reaction had occurred between Cu 2 O and O 2 . The Gibbs energy of formation of CCTO was closely related to the ternary phase relations of system CaO–CuO/Cu 2 O–TiO 2 , and the decrease of x promoted the decomposition of CCTO. All the samples showed high dielectric constant (≥5×10 3 ) in a broad frequency range from 20 Hz to 100 kHz, which decreased gradually with increasing x . Cole–Cole plots of conductivity suggested that the resistivity of grain and grain boundary both increased with increasing x . With the variation in the conductivity of grain boundary which is caused by the increasing x .
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