Abstract
Field-effect transistors are fabricated from thin films of Ag-doped PbSe nanocrystals to analyze the influence of electronically active impurities on electrical transport in this important material for nanocrystal applications. Data is collected as a function of nanocrystal size, dopant concentration, and temperature. Changes in the Fermi level and transport parameters indicate that Ag is acting as a p-type dopant (acceptor).
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