Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth

Abstract

The interface instability in large-size silicon carbide solution growth has been investigated with a focus on the influence of silicon solution convection. Indications have shown that solution convection produces a substantial effect on the instability of the growth interface. As the SiC size increases, the instability becomes more evident. Therefore, improved solution convection is required for growing large-sized silicon carbide ingots by the solution method.