Abstract
The influence of adding dichlorosilane to the silane ‐based reduction reaction of tungsten hexafluoride has been investigated to enhance the properties of this chemical vapor deposition process, especially the control of the growth rate. The growth rate of tungsten by the reduction reaction based on and has been measured. It is shown that the kinetics of the silane‐dichlorosilane process can be characterized by a surface reaction limitation. The sole effect of the in the process is blocking of surface sites by preferential absorption, thereby reducing the growth rate of the tungsten film. © 1999 The Electrochemical Society. All rights reserved.
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