Abstract
The SiC metal-semiconductor field-effect transistors (MESFETs) have been reported to have current instability and strong dispersion caused by trapping phenomena at the surface and in the substrate, which degrade direct-current (DC) and radio-frequency (RF) performance. This paper illustrates the change in electrical characteristics of SiC MESFETs after Si3N4 passivation. Because of a reduction of surface trapping effects, Si3N4 passivation can diminish current collapse under pulsed DC conditions, increasing the RF power performance. The reduction of surface trapping effects is verified by the change in the ratio of the drain current to the gate current under pinch-off conditions.
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