Abstract
The displacement reaction, which is the immersion of Si wafers into a metal-salt solution containing HF, has been applied to prepare catalytic fine metal particles for metal-assisted HF etching, photoelectrochemical solar cells, and autocatalytic plating. The particle density of Pt particles deposited by displacement reaction on n-Si was different based on the solution used for Si chemical oxidation prior to the deposition. Particle density correlates not with the electrical state density at the SiOx/Si interface but with the contact angle of pure water and the microroughness of the oxidized n-Si surface. A model of the deposition process of Pt particles on an oxidized n-Si surface is proposed.
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