Abstract
The radiation and electrical properties of Fully-Depleted (FD) SOI wafers hardened through the implantation of Si ions were provided in this study. The results showed that the Si nanocrystal created through ion implantation could significantly improve the anti-radiation ability of FD SOI wafers by generating electron traps deep within the BOX. The existence of Si nanocrystal was confirmed by the HRTEM and XRD measurements, and the average size of Si nanocrystal was determined. Besides, the adverse effects induced by Si nanocrystal were investigated.
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