Abstract

Effects of silicon concentrations in Ni-Cr-based alloys on the formation of oxide scales were examined in reduced atmosphere. The morphology and oxide scale were compared based on the Si content. The formation and growth kinetics of the oxide scale are rather sensitive to the alloy microstructures and their corresponding Si contents. Oxide ridges formed on the eutectic structure preferentially, while a thinner and homogeneous oxide scale grew from the austenite matrix. The thicknesses of the oxide ridges and the oxide layer on the austenite matrix are dependent of their corresponding Si contents. The ridge-like feature indicates that the austenite/carbide phase boundaries offer fast diffusion paths for metal atom outward diffusion. The formation of SiO2 sub-layer at the oxide scale/metal interface can act as an effective diffusion barrier for atom outward diffusion.

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