Influence of Si(111) √3×√3 - R30 ° -Sb surface phase on the formation and conductance of low-dimensional magnesium silicide layer on Si(111) substrate

Abstract

Using electron energy loss spectroscopy, Raman spectroscopy, and conductance measurements in the temperature range 20–500 K we have investigated doping of two-dimensional Mg silicide using the Sb surface phase. The doping process was performed in two steps including formation of the Sb surface phase followed by reactive deposition of Mg. It was shown that additional levels appear in the Mg2Si band gap resulting in increasing conductance at high temperatures. The Sb doped Mg2Si layer has a band gap of about 1.2 eV.