Abstract
Self-assembly monolayers (SAMs) of octadecyltrichlorosilane (OTS) on a silicon dioxide substrate were formed in solution, or by vacuum vapor methods, and characterized by Fourier transform infrared (FTIR) spectroscopy. We found that the OTS SAMs on SiO2 substrates greatly affect the order and connectivity of evaporated copper phthalocyanine (CuPc) thin films, as confirmed by an atomic force microscopy (AFM) and X-ray diffraction analysis. The performance of the organic CuPc thin film transistor comprising OTS SAMs interposed between a gate dielectric and an organic semiconductor layer could be effectively enhanced as a result of improvements in the quality both of the organic/dielectric interface and the evaporated CuPc thin films. The deposition of an OTS SAM leads to a mobility of 1.48×10-3 cm2/Vs, 1–2 orders higher than that of bare silicon dioxide.
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